The atom-photon entanglement of a two-level system embedded in double-band photonic band edge

The entanglement of a two-level atom with its spontaneously emitted photon embedded in double-band anisotropic photonic crystal has been investigated via the method of the quantum entropy. Different from the case in an isotropic crystal or in vacuum, the entanglement has symmetrical properties and much slower entanglement rate near the two band edges. Moreover, as a result of the atom-photon bound states by the virtue of the localization around the emitting atom, the degree of the entanglement gradually increases, achieves the maximum and then sharply reduces to zero on the boundary of forbidden band gap as the atomic frequency moves from the center of the band gap to either of the band edges.     

Improved surface-enhanced Raman scattering of patterned gold nanoparticles deposited on silicon nanoporous pillar arrays

Large-area silicon nanoporous pillar arrays (Si-NPA) uniformly coated with gold nanoparticles was synthesized, and surface-enhanced Raman scattering of rhodamine 6G adsorbed on these gold nanoparticles were studied and compared. It's found that Au/Si-NPA substrate has a significantly high Raman signal sensitivity and good homogeneity. These are attributed to gold nanoparticles with narrow particle-size distribution uniformly coated on the surface and to the enlarged specific surface area for adsorption of target molecules brought by the porous silicon pillars.     

Cotton fabric coated with nano TiO2-acrylate copolymer for photocatalytic self-cleaning by in-situ suspension polymerization

Two kinds of nano TiO₂-polyacrylate hybrid dispersions, TBM-w and TBM-e were synthesized by in-situ suspension polymerization and solution polymerization respectively, in order to fix the nano TiO₂ on fabrics. The photocatalytic self-cleaning fabrics have received much attention in recent years for its water-saving and environment-protection advantages. However, the fixation of the photocatalyst on fabrics is still a key problem that inhibits industrialization of these eco-friendly fabrics. The cotton fabric was treated by the two hybrid dispersions. The photocatalytic self-cleaning property was characterized. Infrared spectroscopy, burning loss test and thermogravimetry showed that some copolymer chains entangled with the nano TiO₂. Transmission electron microscope illustrated that there was a polymeric layer on the surface of nano TiO₂. The average diameter of TBM-w was smaller than that of TBM-e based on size analysis. The photocatalytic decoloration of the grape syrup indicated that the fabric with TiO₂-polymer hybrid had excellent self-cleaning property.     

Template-free synthesis of TS-1 zeolite film on tubular mullite support

The TS-1 film on tubular mullite support was prepared by secondary growth via template-free route using tetraethyl orthosilicate (TEOS) and tetrabutyl orthotitanate (TBOT) as silica and titanium sources. The as-made films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet-visible spectroscopy (UV-vis). Continuous TS-1 seed layer was bonded tightly to the mullite substrates. After secondary growth in the template-free synthesis solution, intergrown TS-1 zeolite film with the typical MFI-type structure was formed on the outer surface of support. The Si atoms in zeolitic lattice were found to be isomorphously substituted by Ti atoms which existed only in tetrahedral coordination. The thickness of the obtained TS-1 zeolite film was less than 20 μm.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

A novel method for improving the adhesion strength of the electrodeposited Ni films in MEMS

Adhesion performance of MEMS materials is increasingly important with the widely use of miniaturized devices. This paper proposed a novel method for improving adhesion performance between electrodeposited Ni multi-layers. The new method is to treat the Ni substrate in nickel chloride plating solution by pulse reverse current technique before electrodeposition. The dense oxide film of Ni substrate can be removed effectively by this electrochemical method, meanwhile, the proper roughness of Ni substrate is in favor of epitaxial growth during electrodeposition. Moreover, the Ni film is electrodeposited by the new method with low stress and coarse crystal grain. Consequently, the adhesion performance of Ni films is improved dramatically. The experimental results show that the adhesion performance of Ni film electrodeposited by the new method is about 3 times that of by traditional method.     

Ultrasound-assisted anodization of aluminum in oxalic acid

Porous anodic alumina is an important nanoscale template for fabrication of various nanostructures. We report a new ultrasound-assisted anodization process in oxalic acid. Under the continuous irradiation of ultrasound, the one-step-anodized sample has a smooth and clean surface, and two-step-anodization brings ordered porous anodic alumina with higher growth rate of 52 μm/h. The ultrasound applied during the anodization can clean the surface and enhance the nanopore growth since it can accelerate the oxide dissolving on the electrolyte/oxide interface. The ultrasound-assisted anodization may be utilized for other anodizations.     

A two-layer model of laser interaction with skin: A photothermal effect analysis

In order to understand the photothermal effect mechanism of laser interaction with skin, we employed a two-layer model to describe the heat generation, transportation, and dispersion in the procedure of laser interaction with skin. A skin temperature distribution corresponding to the laser interaction direction is calculated to describe the time of skin gasification and the possible thermal injury. The magnitude of time is ms. This basic process provides a possible quantitative recognition of the applications of laser in clinical skin care.     

Design and optimization of periodic structure mechanical filter in suppression of foundation resonances

The paper describes the development of periodic structure mechanical filter (PSMF) that has the potential to reduce vibration transmission and sound radiation at resonances of the foundation in a two-degree-of-freedom (2dof) vibration isolation system by using the band gaps of the periodic structure. The transmission matrix method is used to model vibration transmission of the 2dof system and an analytical expression of sound radiation from the foundation plate is derived. The multi-layer PSMF composed of rigid plates and curved beams is represented by an equivalent m-k-c (viscous damping) model. The propagation/attenuation zones and attenuation ability of PSMF are expressed in the propagation scenario and the iso-attenuation curves by exploiting the unit cell transfer matrix invariant. Influence of the number of unit cells, viscous damping on the mobility of PSMF and vibro-acoustic behavior of the 2dof system is extensively studied. And under the constraints of installation space and stability of the whole system, the more the number of the unit cells, the better attenuation ability in the band gap can be obtained. The interaction between PSMF and the 2dof system is analyzed by the substructure method and contribution of frequency component from different substructures is identified by setting different level of damping for each substructure. Factors influencing the first mounting frequency of the 2dof system with PSMF are discussed and three styles of installing PSMF are studied. The performance of piecewise periodic PSMF and quasi-periodic PSMF is also studied in an attempt to eliminate new-born resonances by PSMF. An optimization scheme involving sensitivity analysis is applied to obtain the optimal values of m and k. And the optimization is effective. The experiment of detecting the band gap of PSMF and the comparative trial of a 2dof system with a flexible plate as the foundation with/without PSMF are carried out. Both numerical and experimental simulation results have demonstrated that by use of PSMF, the vibration transmission at resonances is reduced and the radiation of the foundation at resonances is suppressed.     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.